Comchip 2N7002-G
MOSFET
| Part No. | 2N7002-G |
|---|---|
| Datasheet | 2N7002-G Download |
| Manufacturer |  Comchip |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT-23 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) 0.119(3.00) 0.110(2.80) D GS 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20)MAXIMUM RATINGS
(at TA=25°C) Parameter Symbol Drain-Source voltage Drain current Power dissipation Junction and storage temperature VDS ID PD TJ, TSTG Value 60 250 350 -55 ~ +150 Unit V mA mW °C 0.020(0.50) 0.013(0.35) 0.006(0.15)max 0.007(0.20)min Dimensions in inches and (millimeter)ELECTRICAL CHARACTERISTICS
(at TA=25°C unless otherwise noted) Parameter Conditions Symbol Drain-Source breakdown voltage Gate-Threshold voltage VGS=0V, ID=10μA VDS=VGS, ID=250μA V(BR)DSS Vth(GS) Gate-body leakage VDS=0V, VGS=15V IGSS Zero gate voltage drain current VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=125°C IDSS On-state drain current VGS=10V, VDS=7.5V VGS=4.5V, VDS=10V ID(ON) Drain-S
