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2N7002-G - MOSFET

Key Features

  • Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT-23 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) 0.119(3.00) 0.110(2.80) D GS 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C) Parameter Symbol Drain-Source voltage Drain current Power dissipation Junction and storage temperature VDS ID PD TJ, TSTG Value 60 250 350 -55 ~ +150 Unit V mA mW °C 0.020(0.50) 0.013(0.35) 0.006(0.15)max 0.007(0.20)min.

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Datasheet Details

Part number 2N7002-G
Manufacturer Comchip
File Size 102.91 KB
Description MOSFET
Datasheet download datasheet 2N7002-G Datasheet

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MOSFET 2N7002-G (N-Channel) RoHS Device Features Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT-23 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) 0.119(3.00) 0.110(2.80) D GS 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C) Parameter Symbol Drain-Source voltage Drain current Power dissipation Junction and storage temperature VDS ID PD TJ, TSTG Value 60 250 350 -55 ~ +150 Unit V mA mW °C 0.020(0.50) 0.013(0.35) 0.006(0.15)max 0.007(0.