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R520 - N-Channel MOSFET

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-qhannel devices Order Number I Package TO-220 To-92 IRF520 IRF521 IRF522 IRF523 R520 R521 - Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate ma.

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Datasheet Details

Part number R520
Manufacturer Supertex
File Size 131.07 KB
Description N-Channel MOSFET
Datasheet download datasheet R520 Datasheet
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Full PDF Text Transcription

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! i u p e r t e x ._n c . " IRF520 IRF521 IRF522 IRF523 R520 R521 N-Channel Enhancement-Mode Vertical DMOS Power FETs Preliminary Ordering Information BVossl BVDGS IOOV 60V 100V 60V RDS(ON) (max) 0.30 0.30 0.40 0.40 ID(ON) (min) 8.0A 8.0A 7.0A 7.0A Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-qhannel devices Order Number I Package TO-220 To-92 IRF520 IRF521 IRF522 IRF523 R520 R521 - Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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