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Supertex

TC6215 Datasheet Preview

TC6215 Datasheet

Enhancement-Mode Dual MOSFET

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N- and P-Channel
Enhancement-Mode Dual MOSFET
TC6215
Features
Back to back gate-source Zener diodes
Guaranteed RDS(ON) at 4.0V gate drive
Low threshold
Low on-resistance
Independent N- and P-channels
Electrically isolated N- and P-channels
Low input capacitance
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
Applications
High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
Logic level interfaces
General Description
The Supertex TC6215 consists of high voltage, low threshold N-channel
and P-channel MOSFETs in an 8-Lead SOIC (TG) package. Both
MOSFETs have integrated back to back gate-source Zener diode clamps
and guaranteed RDS(ON) ratings down to 4.0V gate drive allowing them to
be driven directly with standard 5.0V CMOS logic.
These low threshold enhancement-mode (normally-off) transistors utilize
an advanced vertical DMOS structure and Supertex’s well-proven silicon-
gate manufacturing process. This combination produces devices with the
power handling capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of
switching and amplifying applications where very low threshold voltage,
high breakdown voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Ordering Information
Device
Package Option
8-Lead SOIC
4.90x3.90mm body
1.75mm height (max)
1.27mm pitch
BVDSS/BVDGS
N-Channel P-Channel
(V) (V)
TC6215
TC6215TG-G
-G indicates package is RoHS compliant (‘Green’)
150
-150
RDS(ON) (Max)
N-Channel P-Channel
(Ω) (Ω)
4.0 7.0
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55°C to + 150°C
Soldering temperature*
300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Pin Configuration
DP
DP
DN
DN
GP
SP
GN
SN
8-Lead SOIC (TG)
(top view)
Product Marking
YYWW
C6215
LLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
8-Lead SOIC (TG)
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com




Supertex

TC6215 Datasheet Preview

TC6215 Datasheet

Enhancement-Mode Dual MOSFET

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TC6215
www.DataSheet4U.com
N-Channel Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter
Min Typ Max Units
Conditions
BVDSS Drain-to-source breakdown voltage
150 -
-
V VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage
1.0 - 2.0
V VGS = VDS, ID =1.0mA
ΔVGS(th) Change in VGS(th) with temperature
- - -4.5 mV/OC VGS = VDS, ID = 1.0mA
VZGS Gate-source back to back Zener voltage ±14 - ±25
V IGS = ±1.0mA
IDSS Zero gate voltage drain current
-
- 5.0
µA VGS = 0V, VDS = Max Rating
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state drain current
- 2.0 -
- 3.8 -
A VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
- - 4.0
VGS = 4.0V, ID = 0.5A
RDS(ON) Static drain-to-source on-state resistance
-
- 5.0
Ω VGS = 5.0V, ID = 2.0A
- - 4.0
VGS = 10V, ID = 2.0A
ΔRDS(ON) Change in RDS(ON) with temperature
- - 1.0 %/OC VGS = 5.0V, ID = 2.0A
GFS Forward transconductance
560 -
- mmho VDS = 10V, ID = 0.5A
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
- 120 -
- 33 -
- 11 -
VGS = 0V,
pF VDS = 25V,
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 2.5 -
- 2.3 -
- 17.2 -
- 11.3 -
VDD = 25V,
ns ID = 1.0A,
RGEN = 25Ω
VSD Diode forward voltage drop
- - 1.4 V VGS = 0V, ISD = 0.5A
trr Reverse recovery time
- 90 -
ns VGS = 0V, ISD = 0.5A
Notes:
1. All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)
2. All AC parameters sample tested.
N-Channel Switching Waveforms and Test Circuit
VDD
10V
Input
0V
10%
VDD
Output
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tf
10%
90%
Pulse
Generator
RGEN
Input
RL
OUTPUT
D.U.T.
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
2


Part Number TC6215
Description Enhancement-Mode Dual MOSFET
Maker Supertex
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TC6215 Datasheet PDF






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