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TN06C - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Features

  • 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage 0 Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h.

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Datasheet Details

Part number TN06C
Manufacturer Supertex
File Size 229.18 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet TN06C Datasheet
Additional preview pages of the TN06C datasheet.

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Full PDF Text Transcription

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"§upertex inc. TN06C N·Channel Enhancement·Mode Vertical DMOS Power FETs Ordering Information BVDSS I BVDGS 200V 240V RDS(ON) (max) SO SO ID(ON) (min) 1.0A 1.0A VGS(th) (max) 1.SV 1.SV TO·39 TNOS20N2 TNOS24N2 Order Number I Package T0-92 T0-22O TNOS20N3 TNOS20N5 TNOS24N3 TNOS24N5 DICE TNOS20ND TNOS24ND Features 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage 0 Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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