TN0606 - N-Channel Enhancement-Mode Vertical DMOS FETs

Product Overview

Supertex Inc

Datasheet Details

Part number	TN0606
Manufacturer	Supertex Inc
File Size	336.84 KB
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet	TN0606 Datasheet
Additional preview pages of the TN0606 datasheet.

Product details

Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Features

Low threshold - 2.0V max.
High input impedance.
Low input capacitance - 100pF typical.
Fast switching speeds.
Low on-resistance.
Free from secondary breakdown.
Low input and output leakage.

📁 Similar Datasheet

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Other Datasheets by Supertex Inc

TN0604 - N-Channel Enhancement-Mode Vertical DMOS FETs
TN0610 - N-Channel Enhancement-Mode Vertical DMOS FETs
TN0620 - N-Channel Enhancement-Mode Vertical DMOS FETs
TN0104 - N-Channel Enhancement-Mode Vertical DMOS FETs
TN0106 - N-Channel Enhancement-Mode Vertical DMOS FETs
TN0110 - N-Channel Enhancement-Mode Vertical DMOS FETs

Published: Apr 16, 2005 |