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TN0606N6 - N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

Key Features

  • D 4 independent channels D 4 electrically isolated die D Commercial and Military versions available D Freedom from secondary breakdown D Low power drive requirement D Low C,ss and fast switching speeds D High input impedance and high gain.

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Datasheet Details

Part number TN0606N6
Manufacturer Supertex
File Size 57.37 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
Datasheet download datasheet TN0606N6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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" §upertexinc. TN0606N6 TN0606N7 I N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array Ordering Information BVoss ' BVDGS 60V *14-pin Side Brazed Ceramic Dip. ROS(ON) (max) 1.50 Order Number' Package 14-Pin P-Dip I 14-Pin C-Dip· TN0606N6 I TN0606N7 Features D 4 independent channels D 4 electrically isolated die D Commercial and Military versions available D Freedom from secondary breakdown D Low power drive requirement D Low C,ss and fast switching speeds D High input impedance and high gain Applications D Motor control D Convertors D Amplifiers D Switches D Power supply circuits D Driver (Relays, Hammers, Solenoids, Lamps, Memories. Displays, Bipolar Transistors. etc.