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TN0602 - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • Low threshold.
  • 1.6V max. High input impedance Low input capacitance.
  • 140pF typical Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices.

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Datasheet Details

Part number TN0602
Manufacturer Supertex
File Size 29.30 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet TN0602 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TN0602 TN0604 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 20V RDS(ON) (max) 0.75Ω 40V 0.75Ω 40V 1.0Ω * Same as SO-20 with 300 mil wide body. ID(ON) (min) 4.0A 4.0A 4.0A VGS(th) (max) 1.6V 1.6V 1.6V Order Number / Package TO-92 SOW-20* —— TN0604N3 — — TN0604WG 7 Features Low threshold — 1.6V max.