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TN06A - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • D Low threshold D High input impedance D Low input capacitance D Fast switching speeds D Low on resistance D Freedom from secondary breakdown D Low input and output leakage Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperat.

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Datasheet Details

Part number TN06A
Manufacturer Supertex
File Size 229.71 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet TN06A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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(t) §upertex inc. I N-Channel Enhancement-Mode Vertical DMOS Power FETs TN06A Ordering Information BVoss ' ROS(ON) IO(ON) BVOGS (max) (min) SOV 1.S0 3.0A 100V 1.S0 3.0A VGS(th) (max) 1.SV 1.SV T0-39 TNOSOSN2 TNOS10N2 TO·92 TNOSOSN3 TNOS10N3 Order Number' Package TO·220 Quad P·DIP TNOSOSNS TNOS10NS TNOSOSNS - Quad C·DIP TNOSOSN7 - DICE TNOSOSND TNOS10ND Features D Low threshold D High input impedance D Low input capacitance D Fast switching speeds D Low on resistance D Freedom from secondary breakdown D Low input and output leakage Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.