TN06L Datasheet | Supertex

Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o plementary N- and P-Channel devices VGS(th) (max) 1.SV 1.SV T0-39 TNOS02N2 TNOS04N2 Order Number I Package TO-92 TNOS02N3 SOW-20' - TNOS04N3 TNOS04WG DICE TNOS02ND TNOS04ND Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This bination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices....