TP02L - P-Channel Enhancement-Mode Vertical DMOS Power FETs
Features
o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage o Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h.
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P-Channel Enhancement-Mode Vertical DMOS Power FETs
TP02L
Ordering Information
BVoss I BVOGS
-20V
-40V
ROS(ON)
(max)
2.0n
2.0n
IO(ON)
(min)
-2.0A
-2.0A
Order Number I Package
TO-39
TO-92
TP0202N2
TP0202N3
TP0204N2
TP0204N3
Features
o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage o Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.