TP0616 - P-Channel Enhancement-Mode Vertical CMOS Power FETs
Features
s Low threshold.
-2.4 V max s High input impedance s Low input capacitance.
85pF typical s Fast switching speeds s Low on resistance s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices.
TP0604WG- P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
TP0606N6- P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
TP0606N7- P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
TP06A- P-Channel Enhancement-Mode Vertical DMOS Power FETs
TP06C- P-Channel Enhancement-Mode Vertical CMOS Power FETs
TP06L- P-Channel Enhancement-Mode Vertical CMOS Power FETs
Full PDF Text Transcription
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TP0616 TP0620
Low Threshold
P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS
-160V
RDS(ON) (max)
12Ω
-200V
12Ω
† MIL visual screening available
ID(ON) (min)
-0.75A
-0.75A
VGS(th) (max)
-2.4V
-2.4V
Order Number / Package
TO-92
TO-220
TP0616N3
—
TP0620N3 TP0620N5
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Features
s Low threshold — -2.