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TP0610 - P-Channel Enhancement-Mode Vertical DMOS FETs

Key Features

  • s Low threshold.
  • -2.4V max s High input impedance s Low input capacitance.
  • 80pF typical s Fast switching speeds s Low on resistance s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices.

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Datasheet Details

Part number TP0610
Manufacturer Supertex
File Size 28.48 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TP0610 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TP0606 TP0610 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS(ON) BVDGS (max) -60V 3.5Ω ID(ON) (min) -1.5A VGS(th) (max) -2.4V Order Number / Package TO-39 TO-92 TO-220 — TP0606N3 TP0606N5 -100V 3.5Ω -1.5A * 14 pin side brazed ceramic DIP ** 14-pin plastic DIP -2.4V TP0610N2 TP0610N3 — High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Features s Low threshold — -2.