TP0610T - P-Channel Enhancement-Mode MOS Transistors
Siliconix
Download the TP0610T datasheet PDF.
This datasheet also covers the TP0610E variant, as both devices belong to the same p-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.
Full PDF Text Transcription for TP0610T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
TP0610T. For precise diagrams, and layout, please refer to the original PDF.
TP0610 SERIES P-Channel Enhancement-Mode MOS Transistors .-r-Siliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) , TP061DE -60 10 -0.25...
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Y PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) , TP061DE -60 10 -0.25 PACKAGE TO-206AC TP0610L -60 10 -0.18 TO-92 TP0610T -60 10 -0.12 80T-23 Performance Curves: VPOS06 (See Section 7) SOT-23 TOP VIEW TO-92 BOTTOM VIEW ~~ ~ ~ 1 SOURCE 2 GATE 3 DRAIN TO-206AC (TO-52) BOTTOM VIEW DRAIN SOURCE GATE 1 SOURCE 2 GATE 3 DRAIN & CASE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL TP0610E 2 TP0610L TP0610T UNITS Drain-Source Voltage Gate-Source Voltage Vos -60 -60 -60 V VGS ±20 ±30 ±30 Continuous Drain Current Pulsed Drain Current 1 TA= 25°C 10 TA = 100°C -0.25 -0.18 -0.12 -0.15 -0.11
TP0610T Datasheet
