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TP0610T - P-Channel Enhancement-Mode Vertical DMOS FETs

General Description

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Key Features

  • High input impedance and high gain.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • Free from secondary breakdown.

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Datasheet Details

Part number TP0610T
Manufacturer Supertex Inc
File Size 343.85 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TP0610T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Supertex inc. TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features ►► High input impedance and high gain ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► Free from secondary breakdown Applications ►► Logic level interfaces - ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic systems ►► Analog switches ►► Power management ►► Telecom switches General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.