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TP0610T Datasheet P-channel Enhancement-mode Vertical Dmos Fets

Manufacturer: Supertex Inc

Overview: Supertex inc. TP0610T P-Channel Enhancement Mode Vertical DMOS.

Datasheet Details

Part number TP0610T
Manufacturer Supertex Inc
File Size 343.85 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet TP0610T_SupertexInc.pdf

General Description

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

This bination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown.

Key Features

  • High input impedance and high gain.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • Free from secondary breakdown.

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