TP0610T Datasheet and Specifications PDF

The TP0610T is a P-Channel MOSFET.

Key Specifications

PackageSOT-23
Mount TypeSurface Mount
Pins3
Height1.12 mm
Length2.92 mm
Width1.3 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Datasheet4U Logo
Part NumberTP0610T Datasheet
ManufacturerVishay
Overview TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number TP0610L TP0610T VP0610L VP0610T BS250 V(BR)DSS Min (V) −60 −60 −60 −60 −45 rDS(on) Max (W) 10 @ . D D D D D High-Side Switching Low On-Resistance: 8 W Low Threshold:
*1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer APPLICATIONS D Drivers:.
Part NumberTP0610T Datasheet
DescriptionP-Channel Vertical DMOS FET
ManufacturerMicrochip Technology
Overview The TP0610T is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a dev.
* High Input Impedance and High Gain
* Low Power Drive Requirement
* Ease of Paralleling
* Low CISS and Fast Switching Speeds
* Excellent Thermal Stability
* Integral Source-Drain Diode
* Free from Secondary Breakdown Applications
* Logic-Level Interfaces (Ideal for TTL and CMOS)
* Solid-State Relay.
Part NumberTP0610T Datasheet
DescriptionP-Channel Enhancement-Mode MOS Transistors
ManufacturerSiliconix
Overview TP0610 SERIES P-Channel Enhancement-Mode MOS Transistors .-r-Siliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) , TP061DE -60 10 -0.25 PACKAGE TO-206AC . onds) h °C 300 THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL TP0610E TP0610L TP0610T UNITS Junction-to-Ambient RthJA 400 156 350 °C/W ~Pulse width limited by maximum junction temperature Reference Tc for all temperature testing 6-48 ~Siliconix ~ incorporated ELECTRICAL CHARACTERISTICS1 .
Part NumberTP0610T Datasheet
DescriptionP-Channel Enhancement-Mode Vertical DMOS FETs
ManufacturerSupertex Inc
Overview This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with .
*
* High input impedance and high gain
*
* Low power drive requirement
*
* Ease of paralleling
*
* Low CISS and fast switching speeds
*
* Excellent thermal stability
*
* Integral source-drain diode
*
* Free from secondary breakdown Applications
*
* Logic level interfaces - ideal for TTL and CMOS
*
* Solid st.

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