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TP0610L - P-Channel Enhancement-Mode MOS Transistors

Download the TP0610L datasheet PDF. This datasheet also covers the TP0610E variant, as both devices belong to the same p-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (TP0610E-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TP0610L
Manufacturer Siliconix
File Size 152.84 KB
Description P-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet TP0610L Datasheet

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Other Datasheets by Siliconix

Part Number Description
TP0610E P-Channel Enhancement-Mode MOS Transistors
TP0610T P-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TP0610 SERIES P-Channel Enhancement-Mode MOS Transistors .-r-Siliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) , TP061DE -60 10 -0.25 PACKAGE TO-206AC TP0610L -60 10 -0.18 TO-92 TP0610T -60 10 -0.12 80T-23 Performance Curves: VPOS06 (See Section 7) SOT-23 TOP VIEW TO-92 BOTTOM VIEW ~~ ~ ~ 1 SOURCE 2 GATE 3 DRAIN TO-206AC (TO-52) BOTTOM VIEW DRAIN SOURCE GATE 1 SOURCE 2 GATE 3 DRAIN & CASE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL TP0610E 2 TP0610L TP0610T UNITS Drain-Source Voltage Gate-Source Voltage Vos -60 -60 -60 V VGS ±20 ±30 ±30 Continuous Drain Current Pulsed Drain Current 1 TA= 25°C 10 TA = 100°C -0.25 -0.18 -0.12 -0.15 -0.11 -0.