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TP0610T - P-Channel Vertical DMOS FET

General Description

The TP0610T is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process.

Key Features

  • High Input Impedance and High Gain.
  • Low Power Drive Requirement.
  • Ease of Paralleling.
  • Low CISS and Fast Switching Speeds.
  • Excellent Thermal Stability.
  • Integral Source-Drain Diode.
  • Free from Secondary Breakdown.

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Other Datasheets by Microchip Technology

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TP0610T P-Channel Enhancement-Mode Vertical DMOS FET Features • High Input Impedance and High Gain • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • Free from Secondary Breakdown Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photo-Voltaic Drives • Analog Switches • Power Management • Telecommunication Switches General Description The TP0610T is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process.