TP0616 - P-Channel Enhancement-Mode Vertical CMOS Power FETs
Supertex
Key Features
s Low threshold.
-2.4 V max s High input impedance s Low input capacitance.
85pF typical s Fast switching speeds s Low on resistance s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices.
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TP0616 TP0620
Low Threshold
P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS
-160V
RDS(ON) (max)
12Ω
-200V
12Ω
† MIL visual screening available
ID(ON) (min)
-0.75A
-0.75A
VGS(th) (max)
-2.4V
-2.4V
Order Number / Package
TO-92
TO-220
TP0616N3
—
TP0620N3 TP0620N5
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Features
s Low threshold — -2.
TP0616 Datasheet
