TP06A - P-Channel Enhancement-Mode Vertical DMOS Power FETs
Features
o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage
TO.
92 TP0606N3 TP0610N3
Order Number I Package TO.
220 Quad P.
DIP
TP0606NS TP0606N6
TP0610NS
-
Quad C.
DIP
TP0606N7
-
DICE TP0606ND TP0610ND
Advanced CMOS Technology
These enhancement-mode (normally-off) power transistors util.
ize a vertical DMOS structure and Supertex's well-proven silicongate manu.
TP0616- P-Channel Enhancement-Mode Vertical CMOS Power FETs
TP06C- P-Channel Enhancement-Mode Vertical CMOS Power FETs
TP06L- P-Channel Enhancement-Mode Vertical CMOS Power FETs
Full PDF Text Transcription
Click to expand full text
o §upertexinc.
TP06A
P-Channel Enhancement-Mode Vertical CMOS Power FETs
Ordering Information
BVoss I ROS(ON) BVOGS (max)
-60V 3.50
IO(ON) (min)
-1.SA
-100V 3.S0 -1.SA
VGS(th) (max)
-2.4V
-2.4V
TO·39 TP0606N2 TP0610N2
Features
o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage
TO·92 TP0606N3 TP0610N3
Order Number I Package TO·220 Quad P·DIP
TP0606NS TP0606N6
TP0610NS
-
Quad C·DIP
TP0606N7
-
DICE TP0606ND TP0610ND
Advanced CMOS Technology
These enhancement-mode (normally-off) power transistors util· ize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.