* o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhanc
VN2010L
Supertex
107.56 KB
N-channel enhancement-mode vertical dmos power fets.
"!!iupertexinc. VN2010L N-Channel Enhancement-Mode Vertical DMOS Power FETs Preliminary Ordering Information BVoss / BVOGS 200V ROS(ON) (max) 10.
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