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Supertex

VP03D Datasheet Preview

VP03D Datasheet

P-Channel Enhancement-Mode Vertical DMOS FETs

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"§upertexinc.
VP03D
P-Channel Enhancement-Mode
Vertical DMOS Power FETs
Ordering Information
BVoss /
BVOGS
-350V
-400V
RDS(ON)
(max)
6Q
6Q
10(ON)
(min)
-1.5A
-1.SA
TO-3
VP0335N1
VP0340N1
Order Number / Package
T()"39
TO·220
VP0335N2
VP0335N5
VP0340N2
VP0340NS
DICE
VP0335ND
VP0340ND
Features
o Freedom from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low C1SS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
. .i,,;.,
Applications
o Motor control
o Convertors
o Amplifiers
o Switches
o Power supply circuits
o Driver (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Package Options
(Notes 1 and 2)
TO-3
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature>
*Oistance of 1.6 mm from case for 10 seconds.
±20V
-55°C to +150°C
300°C
9-21
TO-39
TO-220
Note 1: See Package Outline section for discrete pinouts.
Note 2: See Array section for quad pinouts.




Supertex

VP03D Datasheet Preview

VP03D Datasheet

P-Channel Enhancement-Mode Vertical DMOS FETs

No Preview Available !

Thermal Characteri$tics
Package
ID·(continu.ous)·
10 .(pulsed)·
TO-3
TO-39
~2.7A
-0.7A
".
-5.0A
-5.0A
TO-220
-1.6A
-5.0A
• 10 (continuous) is limited by max rated Tj'
Power Dissipation
@Tc :o;25°C
100W
6W
50W
91"
°CIW
1.25
20.8
2.5
911
°CIW
30
125
40
lOR
-2.7A
-0.7A
-1.6A
VP03D
IDRM•
-5.0A
-5.0A
-5.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
(Notes 1 and 2)
Symbol
BVoss
VGSIIhI
tNGSlth)
IGSS
loss
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
I VP0340
I VP0335
Change in VGSlth) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
-400
-350
-2.5
Typ Max Unit
V
-4.5 V
-4.8 -6.0 mV/oC
-100 nA
-200 ItA
-2 mA
10(ON)
ON-State Drain Current
-1.5
-1.5 -3.5
A
ROS(ON)
Static Drain-to~Source
ON-State Resis\!i'nce
5
Q
46
t.RO~ONL Change in ROS(ON) with Temperature
0.7 1.2 %IOC
GFS
CISS
Coss
CRSS
Forward Transconductance
Input CapaCitance
Common Source'Output Capacitance
Reverse Transfer CapaCitance
0.5 1
550 700
90 120
20 50
U
pF
td(ON) Turn-ON Delay Time
25 40
t,
td(OFF)
Rise Time
Turn-OFF Delay Time
25 40
65 110
ns
~ Fall Time
20 40
Vso Diode Forward Voltage Drop
-1 -1.3
V
t" Reverse Recovery Time
500 ns
Note 1: All D.C. parameters 100% tested at 25'C unless otherwise stated. (Pulse test: 3001'8 pulse, 2% duty cycle.)
Note 2: All A.C. parameters sample tested.
Conditions
VGS = 0, 10 = -10mA
VGS = Vos' 10 = -10mA
VGS = Vos' 10 = -10mA
VGS = ±20V, Vos = 0
VGS = 0, Vos = Max Rating
VGS = 0, Vos = 0.8 Max Rating
TA = 125°C
VGS = -5V, Vos = -25V
VGs =-10V, Vos =-25V
VGS = -5V, 10 = -0.25A
VGS = -10V, 10 = -0.5A
VGS = -10V, 10 = -0.5A
Vos = -25V, 10 = -0.5A
VGS = 0, Vos = -25V
f= 1 MHz
Voo= -25V
10=-1A
Rs= 50Q
VGS = 0, Iso = -0.5A
VGS = 0, Iso = -0.5A
Switching Waveforms and Test Circuit
t(ON)
td(ON)
Output - - - - - . I
10%
t(OFF)
iI----PULSE~--I
GENERATOR
I
f-~---<O SCOPE
I
V-~~r-~-+~
D.U.T.
1
1
1
1
I -:1
I1
L.. _ _ _ _ _ _ _ _ _ _
9-22


Part Number VP03D
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Maker Supertex
Total Page 4 Pages
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