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VP03D - P-Channel Enhancement-Mode Vertical DMOS FETs

Datasheet Summary

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling c.

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Datasheet Details

Part number VP03D
Manufacturer Supertex
File Size 241.45 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP03D Datasheet
Additional preview pages of the VP03D datasheet.

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Full PDF Text Transcription

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"§upertexinc. VP03D P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss / BVOGS -350V -400V RDS(ON) (max) 6Q 6Q 10(ON) (min) -1.5A -1.SA TO-3 VP0335N1 VP0340N1 Order Number / Package T()"39 TO·220 VP0335N2 VP0335N5 VP0340N2 VP0340NS DICE VP0335ND VP0340ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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