Datasheet4U Logo Datasheet4U.com

VP0300B - P-Channel Enhancement-Mode MOS Transistors

Key Features

  • D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold:.
  • 3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF Benefits D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switching D Easily Driven Without Buffer.

📥 Download Datasheet

Datasheet Details

Part number VP0300B
Manufacturer Siliconix
File Size 68.61 KB
Description P-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VP0300B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number VP0300B VP0300L VP0300M VQ2001J VQ2001P V(BR)DSS Min (V) –30 rDS(on) Max (W) 2.5 @ VGS = –12 V 2.5 @ VGS = –12 V 2.5 @ VGS = –12 V 2 @ VGS = –12 V 2 @ VGS = –12 V VGS(th) (V) –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 ID (A) –1.25 –0.32 –0.5 –0.6 –0.6 Features D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold: –3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF Benefits D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switching D Easily Driven Without Buffer Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.