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VP0300 - P-Channel Enhancement-Mode Vertical DMOS FETs

Key Features

  • s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabiliti.

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Datasheet Details

Part number VP0300
Manufacturer Supertex
File Size 15.66 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP0300 Datasheet

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Full PDF Text Transcription (Reference)

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VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -30V RDS(ON) (max) 2.5Ω ID(ON) (min) -1.5A Order Number / Package TO-92 VP0300L Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.