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Supertex

VP06E Datasheet Preview

VP06E Datasheet

P-Channel Enhancement-Mode Vertical DMOS FETs

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"§upertexinc.
VP06E
P-Channel Enhancement-Mode
Vertical DMOS Power FETs
Ordering Information
BVoss I
BVOGS
-450V
-500V
ROS(ON)
(max)
200
200
IO(ON)
(min)
-0.2A
-0.2A
TO-39
VP0645N2
VP0650N2
Order Number I Package
TO-92
TO-22O
VP0645N3
VP0645N5
VP0650N3
VP0650N5
DICE
VP0645ND
VP0650ND
Features
o Freedom from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low CISS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
.- '"
"
Applications
o Motor control
o Convertors
o Amplifiers
o Switches
o Power supply circuits
o Driver (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature"
"'Distance of 1.6 mm from case for 10 seconds.
Package Options
(Note 1)
±20V
if
TO-39
~
TO-220
i
TO-92
Note 1: See Package Outline section for discrete pinouts.
9-43




Supertex

VP06E Datasheet Preview

VP06E Datasheet

P-Channel Enhancement-Mode Vertical DMOS FETs

No Preview Available !

Thermal Characteristics
Package
10 (continuous)"
10 (pul$8d)~
TO-92
TO-39
TO-220
-0.1A
-0.25A
-0.25A
• 10 (continuous) is limited by max rated \
-0.3A
-0.5A
-0.5A
Power Dissipation
@Tc=25°C
1W
6W
45W
8)0
°C/W
125
21
2.7
8)0
°C/W
170
125
70
VP06E
lOR
-0.1A
-0.25A
-0.25A
10RM"
-0.3A
-0.5A
-0.5A
Electrical Characteristics (@ 25°C unless otherwise specified)
(Notes 1 and 2)
Symbol
BVoss
VGS(th)
I'NGS(th)
IGSS
loss
Parameter
Min Typ Max Unit
Drain-to-Source
Breakdown Voltage
I VP0650
I VP0645
-500
-450
V
Gate Threshold Voltage
-2 -4 V
Change in VGS(th) with Temperature
-4.8 mV/oC
Gate Body Leakage
-100 nA
Zero Gate Voltage Drain Current
-10 itA
-1 mA
10(ON)
ON-State Drain Current
-100
-200 -300
mA
ROS(ON)
Static Drain-to-Source
ON-State Resistance
30 n
22 30
t.ROS(ON)
GFS
CISS
Coss
CRSS
tdON
tr
td(OFF)
~
Vso
trr
Change in ROS(ON) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.75 %/OC
50 mO
75 130
50 75 pF
10 20
10
10
ns
20
15
1.8 V
300 ns
Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300!1S pulse. 2% duty cycle.)
Not. 2: All A.C. parameters sample tested.
Conditions
VGS = 0, 10 = -2mA
VGS = Vos' 10 = -2mA
VGS = VDS' 10 = -2mA
VGS = ±20V, Vos = 0
VGS = 0, Vos = Max Rating
VGS = 0, Vos = 0.8 Max Rating
TA = 125°C
VGS = -5V, Vos = -25V
VGS = -10V, Vos = -25V
VGS = -5V, 10 = -100mA
VGS = -10V, 10 = -100mA
VGs =-10A,10 =-100mA
VO" = -25V, 10 = -100mA
VGS = 0, Vos = 25V
f= 1 MHz
Voo = -25V
10 = -100mA
Rs=50n
VGS = 0, Iso = -50mA
VGS = 0, Iso = -50mA
Switching Waveforms and Test Circuit
Output --------J
10%
t(OFF)
iI----PULSE---i
GENERATOR
1
I-~-OSCOPE
1
v-~~--~~
D.U.T.
1
1
1
1
1
i ' " IL.. __________1
9-44


Part Number VP06E
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Maker Supertex
Total Page 4 Pages
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