Download 2N5086 Datasheet PDF
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2N5086 Key Features

  • PNP silicon epitaxial transistor for switching and amplifier

2N5086 Description

2N5086 2N5087 VCEO Collector-Emitter Voltage 50 VCBO Collector-Base Voltage 50 VEBO Emitter-Base Voltage 3.0 IC TJ ,TSTG Collector Current Continuous Operation and Storage Junction Temperature Range 100 -55 to +150 Unit V V V mA °C These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. These ratings are based on a maximum junction temperature of 150 degrees.

2N5086 Applications

  • This device is designed for low level, high gain, low noise general purpose applications at collector currents to 50mA