* PNP silicon epitaxial transistor for switching and amplifier applications
* This device is designed for low level, high gain, low noise general purpose applicat.

* This device is designed for low level, high gain, low noise general purpose applications at collector currents to .

2N5086 2N5087 VCEO Collector-Emitter Voltage 50 VCBO Collector-Base Voltage 50 VEBO Emitter-Base Voltage 3.0 IC TJ ,TSTG Collector Current Continuous Operation and Storage Junction Temperature Range 100 -55 to +150 Unit V V V mA °C * .

2N508

2N5083

2N5084

2N5085

2N5087

2N5088

2N5089

2N508A

2N50-CB

2N50-SE

2N5002

2N5003

2N5004