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2N5086 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 50 50 3.0 50

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Datasheet Details

Part number 2N5086
Manufacturer CDIL
File Size 75.17 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet 2N5086 Datasheet

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Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N5086 2N5087 TO-92 Plastic Package EBC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 50 50 3.0 50 625 5.0 1.5 12 - 55 to +150 THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) *Rth (j-a) 83.