Datasheet Details
| Part number | 2N5086 |
|---|---|
| Manufacturer | CDIL |
| File Size | 75.17 KB |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| Datasheet | 2N5086-CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified pany PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N5086 2N5087 TO-92 Plastic Package EBC Amplifier Transistors ABSOLUTE MAXIMUM.
| Part number | 2N5086 |
|---|---|
| Manufacturer | CDIL |
| File Size | 75.17 KB |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| Datasheet | 2N5086-CDIL.pdf |
|
|
|
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 50 50 3.0 50 625 5.0 1.5 12 - 55 to +150 THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) *Rth (j-a) 83.3 200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP Collector Emitter Voltage *VCEO IC=1mA, IB=0 50 Collector Base Voltage VCBO IC=100µA, IE=0 50 Collector Cut off Current ICBO VCB=10V, IE = 0 VCB=35V, IE = 0 Emitter Cut off Current IEBO VEB=3V, IC = 0 DC Current Gain hFE VCE=5V, IC=100µA 2N5086 150 2N5087 250 VCE=5V, IC=1mA 2N5086 150 2N5087 250 *VCE=5V, IC=10mA 2N5086 150 2N5087 250 Collector Emitter Saturation Voltage VCE (sat) IC=10mA, IB=1mA Base Emitter On Voltage VBE (on) VCE=5V, IC=1mA *Pulse Test: Pulse Width<300µs, Duty Cycle<2% 2N5086_5087Rev_1 171103E MAX 10 50 50 500 800 0.30 0.85 UNITS V V V mA mW mW/ºC W mW/ºC ºC ºC/W ºC/W UNITS V V nA nA nA V V Continental Device India Limited Data Sheet Page 1 of 5 PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N5086 2N5087 TO-92 Plastic Package EBC DYNAMIC CHARACTERISTICS ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP Transition Frequency fT IC=500µA, VCE=5V, 40 f=20MHz Collector Base Capacitance Small Signal Current Gain Noise Figure Ccb VCB=5V, IE=0, f=1KHz hfe IC=1mA, VCE=5V, f=1KHz 2N5086 150 2N5087 250 NF VCE =5V, IC=20µA, RS=10kΩ, f=10 Hz to 15.7 KHz 2N5086 2N5087 VCE =5V, IC=100µA, R
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5086 | PNP General Purpose Amplifier | Fairchild Semiconductor |
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2N5086 | PNP Silicon Epitaxial Planar Transistor | SEMTECH |
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2N5086 | AMPLIFIER TRANSISTOR | Motorola |
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2N5086 | PNP General Purpose Amplifier | ON Semiconductor |
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2N5086 | Small Signal Low Noise Transistors | TAITRON |
| Part Number | Description |
|---|---|
| 2N5087 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5088 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5089 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5294 | NPN PLASTIC POWER TRANSISTOR |
| 2N5296 | NPN PLASTIC POWER TRANSISTOR |
| 2N5298 | NPN PLASTIC POWER TRANSISTOR |
| 2N5320 | SILICON POWER SWITCHING TRANSISTORS |
| 2N5321 | SILICON POWER SWITCHING TRANSISTORS |
| 2N5322 | SILICON POWER SWITCHING TRANSISTORS |
| 2N5323 | SILICON POWER SWITCHING TRANSISTORS |