Continental Device India 2N5088
NPN SILICON EPITAXIAL TRANSISTORS
| Part No. | 2N5088 |
|---|---|
| Datasheet | 2N5088 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL 2N5088 Collector -Base Voltage VCBO 35 Collector -Emitter Voltage VCE0 30 Emitter -Base Voltage VEBO Collector Current- Continuous IC Power Dissipation@ Ta=25 deg C PD Derate Above 25 deg C Power Dissipation@ Tc=25 deg C PD Derate Above 25 deg C Junction Temperature Tj Storage Temperature Tstg THERMAL RESISTANCE Junction to Ambient Rth(j-a) (1) Junction to Case Rth(j-c)ELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL Collector -Emitter Voltage VCEO* IC=1mA, IB=0 2N5088 2N5089 4.5 50 625 5.0 1.5 12 150 -55 to +150 357 125 Min 30 25 2N5089 UNITS 30 V 25 V V mA mW mW/deg C W mW/deg C deg C deg C deg C/W deg C/W Max UNITS -V -V Collector -Base Voltage VCBO IC=100uA,IE=0 2N5088 35 - V 2N5089
