2N5087
Description
2N5086 2N5087 VCEO Collector-Emitter Voltage 50 VCBO Collector-Base Voltage 50 VEBO Emitter-Base Voltage 3.0 IC TJ ,TSTG Collector Current Continuous Operation and Storage Junction Temperature Range 100 -55 to +150 Unit V V V mA °C These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. These ratings are based on a maximum junction temperature of 150 degrees C. 2.
Key Features
- PNP silicon epitaxial transistor for switching and amplifier applications
- This device is designed for low level, high gain, low noise general purpose applications at collector currents to 50mA
- RoHS compliance Mechanical Data Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight:
- 18 gram TO-92
