2N5087 Overview
2N5086 2N5087 VCEO Collector-Emitter Voltage 50 VCBO Collector-Base Voltage 50 VEBO Emitter-Base Voltage 3.0 IC TJ ,TSTG Collector Current Continuous Operation and Storage Junction Temperature Range 100 -55 to +150 Unit V V V mA °C These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. These ratings are based on a maximum junction temperature of 150 degrees.
2N5087 Key Features
- PNP silicon epitaxial transistor for switching and amplifier
2N5087 Applications
- This device is designed for low level, high gain, low noise general purpose applications at collector currents to 50mA
