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2N5086 - Small Signal Low Noise Transistors

General Description

2N5086 2N5087 VCEO Collector-Emitter Voltage 50 VCBO Collector-Base Voltage 50 VEBO Emitter-Base Voltage 3.0 IC TJ ,TSTG Collector Current Continuous Operation and Storage Junction Temperature Range 100 -55 to +150 Unit V V V mA °C These ratings are limiting values above which

Key Features

  • PNP silicon epitaxial transistor for switching and amplifier.

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Datasheet Details

Part number 2N5086
Manufacturer TAITRON
File Size 369.13 KB
Description Small Signal Low Noise Transistors
Datasheet download datasheet 2N5086 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Small Signal Low Noise Transistors (PNP) 2N5086/2N5087 Small Signal Low Noise Transistors (PNP) Features • PNP silicon epitaxial transistor for switching and amplifier applications • This device is designed for low level, high gain, low noise general purpose applications at collector currents to 50mA • RoHS compliance Mechanical Data Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.18 gram TO-92 Absolute Maximum Ratings * (T Ambient=25ºC unless noted otherwise) Symbol Description 2N5086 2N5087 VCEO Collector-Emitter Voltage 50 VCBO Collector-Base Voltage 50 VEBO Emitter-Base Voltage 3.