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2N5089 - NPN SILICON EPITAXIAL TRANSISTORS

Download the 2N5089 datasheet PDF. This datasheet also covers the 2N5088 variant, as both devices belong to the same npn silicon epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL 2N5088 Collector -Base Voltage VCBO 35 Collector -Emitter Voltage VCE0 30 Emitter -Base Voltage VEBO Collector Current- Continuous IC Power Dissipation@ Ta=25 deg C PD Derate Above 25 deg C Power Dissipation@ Tc=25 deg C PD Derate Above 25 deg C Junction Temperature Tj Stor

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5088-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5089
Manufacturer CDIL
File Size 156.23 KB
Description NPN SILICON EPITAXIAL TRANSISTORS
Datasheet download datasheet 2N5089 Datasheet

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Other Datasheets by CDIL

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE EBC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 Collector -Base Voltage VCBO 35 Collector -Emitter Voltage VCE0 30 Emitter -Base Voltage VEBO Collector Current- Continuous IC Power Dissipation@ Ta=25 deg C PD Derate Above 25 deg C Power Dissipation@ Tc=25 deg C PD Derate Above 25 deg C Junction Temperature Tj Storage Temperature Tstg THERMAL RESISTANCE Junction to Ambient Rth(j-a) (1) Junction to Case Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL Collector -Emitter Voltage VCEO* IC=1mA, IB=0 2N5088 2N5089 4.5 50 625 5.0 1.