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2N5089 - NPN SILICON EPITAXIAL TRANSISTORS

This page provides the datasheet information for the 2N5089, a member of the 2N5088 NPN SILICON EPITAXIAL TRANSISTORS family.

Datasheet Summary

Description

SYMBOL 2N5088 Collector -Base Voltage VCBO 35 Collector -Emitter Voltage VCE0 30 Emitter -Base Voltage VEBO Collector Current- Continuous IC Power Dissipation@ Ta=25 deg C PD Derate Above 25 deg C Power Dissipation@ Tc=25 deg C PD Derate Above 25 deg C Junction Temperature Tj Stor

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Datasheet preview – 2N5089

Datasheet Details

Part number 2N5089
Manufacturer CDIL
File Size 156.23 KB
Description NPN SILICON EPITAXIAL TRANSISTORS
Datasheet download datasheet 2N5089 Datasheet
Additional preview pages of the 2N5089 datasheet.

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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE EBC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 Collector -Base Voltage VCBO 35 Collector -Emitter Voltage VCE0 30 Emitter -Base Voltage VEBO Collector Current- Continuous IC Power Dissipation@ Ta=25 deg C PD Derate Above 25 deg C Power Dissipation@ Tc=25 deg C PD Derate Above 25 deg C Junction Temperature Tj Storage Temperature Tstg THERMAL RESISTANCE Junction to Ambient Rth(j-a) (1) Junction to Case Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL Collector -Emitter Voltage VCEO* IC=1mA, IB=0 2N5088 2N5089 4.5 50 625 5.0 1.
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