2N6648 - Darlington Power Transistor

Product Overview

TAITRON

Datasheet Details

Part number	2N6648, 2N6383
Manufacturer	TAITRON
File Size	335.98 KB
Description	Darlington Power Transistor
Datasheet	2N6383-TAITRON.pdf
Note	This datasheet PDF includes multiple part numbers: 2N6648, 2N6383. Please refer to the document for exact specifications by model.
Additional preview pages of the 2N6648 datasheet.

Product details

Description

2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate above TA=25°C Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range 0.25 100 0.571 1.75 -65 to +200 TO-3 2N6385 2N6650 80 80 Unit V V V A A W W/°C °C /W °C TAITRON COMPONENTS I

Features

High Gain Dalington Performance.
DC Current Gain hFE = 3000(Typ) @ IC = 5.0A.
True Complementary Specifications.
RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol.

📁 Similar Datasheet

2N6649 - PNP Silicon Power Darlington Transistors (VPT)
2N6603 - HIGH FREQUENCY TRANSISTOR (Motorola)
2N6604 - HIGH FREQUENCY TRANSISTOR (Motorola)
2N6609 - COMPLEMENTARY POWER TRANSISTORS (ON Semiconductor)
2N6620 - NPN SILICON TRANSISTOR (Siemens)
2N665 - PNP Transistor (Motorola)
2N6650 - PNP Silicon Power Darlington Transistors (VPT)
2N6653 - Bipolar NPN Device (Seme LAB)

Other Datasheets by TAITRON

2N6383 - Darlington Power Transistor
2N6384 - Darlington Power Transistor
2N6385 - Darlington Power Transistor

Published: Jan 28, 2016 |