| Part Number | 2N6648 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . . |
The 2N6648 is a PNP silicon power darington transistor.
| Part Number | 2N6648 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . . |
| Part Number | 2N6648 Datasheet |
|---|---|
| Description | Darlington Power Transistor |
| Manufacturer | Taitron Components |
| Overview |
2N6383 2N6648
2N6384 2N6649
VCBO
Collector-Base Voltage
40 60
VCEO
Collector-Emitter Voltage
40
60
VEBO
Emitter-Base Voltage
5
Collector Current (Continuous)
IC
Collector Current (Peak)
.
* High Gain Dalington Performance * DC Current Gain hFE = 3000(Typ) @ IC = 5.0A * True Complementary Specifications * RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Sym. |
| Part Number | 2N6648 Datasheet |
|---|---|
| Description | PNP DARLINGTON POWER SILICON TRANSISTOR |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Coll. 6648 2N6649 2N6650 2N6648 2N6649 2N6650 V(BR)CEO -40 -60 -80 -40 -60 -80 -1.0 -1.0 -1.0 Vdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCB = -40 Vdc VCB = -60 Vdc VCB = -80 Vdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446. |
| Part Number | 2N6648 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-3 packaging ·Built-in base-emitter shunt resistors ·Very high DC current gain ·Complement to type 2N6648 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A. ication isc Silicon PNP Darlingtion Power Transistor 2N6648 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=- 5A; IB= -10mA VCE(sat)-2 . |
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6648 | VPT Components | PNP Silicon Power Darlington Transistors |