Datasheet Details
| Part number | 2N6648 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.47 KB |
| Description | PNP Transistor |
| Datasheet | 2N6648-INCHANGE.pdf |
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Overview: isc Product Specification isc Silicon PNP Darlingtion Power Transistor.
| Part number | 2N6648 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.47 KB |
| Description | PNP Transistor |
| Datasheet | 2N6648-INCHANGE.pdf |
|
|
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·With TO-3 packaging ·Built-in base-emitter shunt resistors ·Very high DC current gain ·plement to type 2N6648 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ·Power switching ·Hammer drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current -0.25 A PC Collector Power Dissipation@TC=25℃ 100 W Tj Junction Temperature Tstg Storage Temperature 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ThermalResistance, Junction to Case MAX 1.75 UNIT ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Product Specification isc Silicon PNP Darlingtion Power Transistor 2N6648 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-50mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=- 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6648 | PNP Silicon Power Darlington Transistors | VPT |
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2N6648 | PNP DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
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2N6648 | Darlington Power Transistor | TAITRON |
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2N6648 | PNP silicon power darington transistor | Central Semiconductor |
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