MBR20100CT Overview
Key Specifications
Package: TO-220AB
Mount Type: Through Hole
Pins: 3
Height: 19 mm
Description
VRRM VRWM VR VR (RMS) IF(AV) Maximum Repetitive Peak Reverse Voltage Maximum Working Peak Reverse Voltage Maximum DC Blocking Voltage RMS Reverse Voltage Maximum Average Forward Rectified Current IFSM Peak Forward Surge Current TJ TSTG Operating Junction Temperature Range Storage Temperature Range MBR2080CT MBR2090CT 80 90 80 90 80 90 56 63 20 200 MBR20100CT 100 100 100 70 Unit V V V V Conditions A See Fig.1 8.3ms single half sine- A wave superimposed on rated load(JEDEC method) -65 to +175 °C TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/PQ Page 1 of 4 20A Schottky Barrier Rectifiers MBR2080CT – MBR20100CT Symbol Description VF Maximum Forward Voltage per Diode IR Maximum DC Reverse Current at Rated DC Blocking Voltage RθJC Typical MBR2080CT MBR2090CT 0.8 0.05 20 2 MBR20100CT Unit Conditions V IF=10A Tj=25°C mA Tj=125°C °C/W Note: Single phase, half wave, 60 Hz, resistive or inductive load.
Key Features
- Low power loss, high efficiency
- High current capability
- Guardring for overvlotage protection
- For use in low voltage,high frequency inverters free wheeling , and polarlity protection applications
- Metal silicon junction, majority carrier conduction
