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MJD13003 Datasheet Smd Power Transistor

Manufacturer: TAITRON

Overview: SMD Power Transistor (NPN) MJD13003 SMD Power Transistor (NPN).

Datasheet Details

Part number MJD13003
Manufacturer TAITRON
File Size 343.95 KB
Description SMD Power Transistor
Datasheet MJD13003-TAITRON.pdf

General Description

Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak* MJD13003 400 700 9.0 1.5 3.0 Base Current Continuous 0.75 IB Base Current Peak* 1.5 Emitter Current Continuous 2.25 IE Emitter Current Peak* 4.5 PD **PD TJ, TSTG Power Dissipation at TC=25°C Derate above 25°C Power Dissipation at TA=25°C Derate above 25°C Operating and Storage Junction Temperature Range 15 0.12 1.56 0.0125 -65 to +150 TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Unit V V V A A A A A A W W/° C W W/° C °C Rev.

A/CW Page 1 of 4 SMD Power Transistor (NPN) MJD13003 Thermal Characteristics Symbol Description MJD3055 Unit RthJC Thermal Resistance from Junction to Case 8.33 °C/W **RthJA Thermal Resistance from Junction to Ambient 80 TL Maximum Lead Temperature for Soldering Purposes 260 Note: * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% **These ratings are applicable when surface mounted on the minimum pad sizes recommended.

°C/W °C Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description VCEO Collector Emitter Voltage ICEO Collector Cut-off Current IEBO Emitter Cut-off Current *hFE D.C.

Key Features

  • Designed for high voltage, high speed power switching inductive circuits.

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