MJD13003 Datasheet and Specifications PDF

The MJD13003 is a NPN SILICON POWER TRANSISTOR.

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Part NumberMJD13003 Datasheet
Manufactureronsemi
Overview MJD13003 High Voltage SWITCHMODET Series DPAK For Surface Mount Applications This device is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It . ÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector
*Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector
*Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
* Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
* Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
* Continuous
* Peak (1) Î.
Part NumberMJD13003 Datasheet
DescriptionSMD Power Transistor
ManufacturerTaitron Components
Overview Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak* MJD13003 400 700 9.0 1.5 3.0 Base Current Continuous 0.75 IB Base Cu.
* Designed for high voltage, high speed power switching inductive circuits applications
* RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted other.
Part NumberMJD13003 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ch. Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= .