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SMD Power Transistor (NPN) MJD13003
SMD Power Transistor (NPN)
Features
Designed for high voltage, high speed power switching inductive circuits applications
RoHS compliance
Mechanical Data
Case: Terminals:
Weight:
D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams
D-PACK (TO-252)
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
VCEO VCEV VEBO
IC
Description Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak*
MJD13003 400 700 9.0 1.5 3.0
Base Current Continuous
0.75
IB
Base Current Peak*
1.5
Emitter Current Continuous
2.25
IE
Emitter Current Peak*
4.