MJD13003 Overview
Description
Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak* MJD13003 400 700 9.0 1.5 3.0 Base Current Continuous 0.75 IB Base Current Peak* 1.5 Emitter Current Continuous 2.25 IE Emitter Current Peak* 4.5 PD **PD TJ, TSTG Power Dissipation at TC=25°C Derate above 25°C Power Dissipation at TA=25°C Derate above 25°C Operating and Storage Junction Temperature Range 15 0.12 1.56 0.0125 -65 to +150 TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Unit V V V A A A A A A W W/° C W W/° C °C Rev. A/CW Page 1 of 4 SMD Power Transistor (NPN) MJD13003 Symbol Description MJD3055 Unit RthJC 8.33 °C/W **RthJA 80 TL Maximum Lead Temperature for Soldering Purposes 260 Note: * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% **These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Key Features
- Designed for high voltage, high speed power switching inductive circuits applications
