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MJD13003 - SMD Power Transistor

General Description

Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak MJD13003 400 700 9.0 1.5 3.0 Base Current Continuous 0.75 IB Base Current Peak 1.5 Emitter Current Continuous 2.25 IE Emitter Current Peak 4.5 PD

Key Features

  • Designed for high voltage, high speed power switching inductive circuits.

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Datasheet Details

Part number MJD13003
Manufacturer TAITRON
File Size 343.95 KB
Description SMD Power Transistor
Datasheet download datasheet MJD13003 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Power Transistor (NPN) MJD13003 SMD Power Transistor (NPN) Features  Designed for high voltage, high speed power switching inductive circuits applications  RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VCEO VCEV VEBO IC Description Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak* MJD13003 400 700 9.0 1.5 3.0 Base Current Continuous 0.75 IB Base Current Peak* 1.5 Emitter Current Continuous 2.25 IE Emitter Current Peak* 4.