Datasheet Details
| Part number | MJD13003 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 231.66 KB |
| Description | NPN Transistor |
| Datasheet | MJD13003-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJD13003 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 231.66 KB |
| Description | NPN Transistor |
| Datasheet | MJD13003-INCHANGE.pdf |
|
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 1.5 A ICM Collector Current-peak 3.0 A IB Base Current 0.75 A IBM Base Current-Peak PD Collector Power Dissipation TC=25℃ TJ Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MJD13003 isc Website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJD13003 | NPN SILICON POWER TRANSISTOR | ON Semiconductor |
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MJD13003 | SMD Power Transistor | TAITRON |
| Part Number | Description |
|---|---|
| MJD200 | NPN Transistor |
| MJD42C1G | PNP Transistor |