MJD13003 Overview
Description
Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) - Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A APPLICATIONS - Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 1.5 A ICM Collector Current-peak 3.0 A IB Base Current 0.75 A IBM Base Current-Peak PD Collector Power Dissipation TC=25℃ TJ Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MJD13003 isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.25 A TC= 100℃ VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 1.5A ;IB= 0.5A VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICEO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 0.5 A ;IB= 0.1A IC= 1A ;IB= 0.25 A TC= 100℃ VCB= 400V;IE= 0 TC= 100℃ VEB= 9V; IC= 0 hFE-1 DC Current Gain IC= 0.5 A; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V MJD13003 MIN TYP.
