MJD13003
MJD13003 is NPN Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector- Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
- Collector Saturation Voltage
: VCE(sat) = 1.0(Max) @ IC= 1.0A APPLICATIONS
- Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection...