Datasheet4U Logo Datasheet4U.com

MJD2955 - SMD Power Transistor

General Description

MJD2955 Marking Code MJD2955 VCEO Collector-Emitter Voltage 60 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 70 5 IC Collector Current Continuous IB Base Current 10 6 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 PD TJ, TSTG Power Dissipation at TA=25°C Derate

Key Features

  • Designed for general purpose amplifier and low speed switching.

📥 Download Datasheet

Datasheet Details

Part number MJD2955
Manufacturer TAITRON
File Size 214.33 KB
Description SMD Power Transistor
Datasheet download datasheet MJD2955 Datasheet

Full PDF Text Transcription for MJD2955 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MJD2955. For precise diagrams, and layout, please refer to the original PDF.

SMD Power Transistor (PNP) MJD2955 SMD Power Transistor (PNP) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mec...

View more extracted text
e amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD2955 Marking Code MJD2955 VCEO Collector-Emitter Voltage 60 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 70 5 IC Collector Current Continuous IB Base Current 10 6 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 *PD TJ, TSTG Power Dissipation at TA=25°C Derate above 25°C Operating and Storage Junction Temperature Range 1.75 0.