MJD2955
Marking Code
MJD2955
VCEO
Collector-Emitter Voltage
60
VCBO VEBO
Collector-Base Voltage Emitter-Base Voltage
70 5
IC Collector Current Continuous IB Base Current
10 6
Power Dissipation at TC=25°C
PD
Derate above 25°C
20 0.16
PD TJ, TSTG
Power Dissipation at TA=25°C
Derate
Key Features
Designed for general purpose amplifier and low speed switching.
Full PDF Text Transcription for MJD2955 (Reference)
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SMD Power Transistor (PNP) MJD2955 SMD Power Transistor (PNP) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mec...
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e amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD2955 Marking Code MJD2955 VCEO Collector-Emitter Voltage 60 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 70 5 IC Collector Current Continuous IB Base Current 10 6 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 *PD TJ, TSTG Power Dissipation at TA=25°C Derate above 25°C Operating and Storage Junction Temperature Range 1.75 0.