MMBT2222A
Marking Code
1P
VCBO VCEO VEBO
IC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
75 40 6.0 0.6
Ptot
Power Dissipation above 25°C (note 1)
350 2.8
RθJA TJ
TSTG
Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperatur
Key Features
NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier.
Full PDF Text Transcription for MMBT2222A (Reference)
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MMBT2222A. For precise diagrams, and layout, please refer to the original PDF.
SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: T...
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g and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT2222A SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT2222A Marking Code 1P VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current 75 40 6.0 0.6 Ptot Power Dissipation above 25°C (note 1) 350 2.8 RθJA TJ TSTG Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range 357 150 -55 to +150 Note: (1) Device moun
MMBT2222A Datasheet
