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TAITRON

MMBT8099 Datasheet Preview

MMBT8099 Datasheet

SMD General Purpose Transistor

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SMD General Purpose Transistor (NPN)
Features
NPN Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
Mechanical Data
Case:
Terminals:
Weight:
SOT-23, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.008 gram
SMD General Purpose
Transistor (NPN)
MMBT8099
SOT-23
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MMBT8099
Unit
Conditions
VCBO
VCEO
VEBO
IC
Marking Code
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
KB
80 V
80 V
6.0 V
0.5 A
Ptot
RθJA
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
225 mW
TA=25 ˚C
1.8
mW/° C
Derate above 25 ˚C
556 ° C /W
Ptot
Power Dissipation (Note 2)
300 mW
TA=25 ˚C
2.4
mW/° C
Derate above 25 ˚C
RθJA
Thermal Resistance, Junction to Ambient (Note 2)
417 ° C /W
TJ Junction Temperature
150 ° C
TSTG
Storage Temperature Range
-55 to +150
°C
Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)
2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/AH
Page 1 of 3




TAITRON

MMBT8099 Datasheet Preview

MMBT8099 Datasheet

SMD General Purpose Transistor

No Preview Available !

SMD General Purpose Transistor (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
MMBT8099
Symbol
Description
hFE*
D.C. Current Gain
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
*VCEsat
Collector-Emitter Saturation Voltage
VBEon*
ICES
ICBO
IEBO
fT
Base-Emitter On Voltage
Collector Cut-off Current
Base Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
CCBO
Output Capacitance
CEBO
Input Capacitance
*Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
Min.
100
100
75
80
80
6.0
-
-
0.6
-
-
-
150
-
-
Max.
300
-
-
-
-
-
0.4
0.3
0.8
0.1
0.1
0.1
-
6
25
Unit
V
V
V
V
V
µA
µA
µA
MHz
pF
pF
Conditions
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
IC=0.1mA, IE=0
IC=10mA, IB=0
IE=0.01mA, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=10mA
IC=10mA, VCE=5V
VCE=60V, IB=0
VCB=80V, IE=0
VEB=6V, IC=0
VCE=5V, IC=10mA,
f=100MHz
VCB=5V, f=1.0MHz,
IE=0
VEB=0.5V, f=1.0MHz,
IC=0
www.taitroncomponents.com
Rev. A/AH
Page 2 of 3


Part Number MMBT8099
Description SMD General Purpose Transistor
Maker TAITRON
Total Page 3 Pages
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