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MMBT8550 Datasheet SMD General Purpose Transistor

Manufacturer: TAITRON

Datasheet Details

Part number MMBT8550
Manufacturer TAITRON
File Size 334.43 KB
Description SMD General Purpose Transistor
Datasheet download datasheet MMBT8550 Datasheet

General Description

MMBT8550 Unit Conditions VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.5 A PD Total Device Power Dissipation(Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction to Ambient 556 °C /W PD Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction to Ambient 417 °C /W TJ Junction Temperature -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C Note: 1.

FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2.

Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.

Overview

SMD General Purpose Transistor (PNP).

Key Features

  • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier.