MMBT8550 - SMD General Purpose Transistor

Product Overview

TAITRON

Datasheet Details

Part number	MMBT8550
Manufacturer	TAITRON
File Size	334.43 KB
Description	SMD General Purpose Transistor
Datasheet	MMBT8550 Datasheet
Additional preview pages of the MMBT8550 datasheet.

Product details

Description

MMBT8550 Unit Conditions VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.5 A PD Total Device Power Dissipation(Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction to Ambient 556 °C /W PD Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction to Ambient 417 °C /W TJ Ju

Features

PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier.

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Published: Mar 1, 2015 |