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TGL41-7.5C - 400W Surface Mount Transient Voltage Suppressor

Download the TGL41-7.5C datasheet PDF. This datasheet also covers the TGL416.8 variant, as both devices belong to the same 400w surface mount transient voltage suppressor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Breakdown voltage from 6.8 to 170 volts.
  • Glass passivated junction.
  • Excellent clamping capability.
  • Low incremental surge resistance.
  • 400W peak pulse capability with a 10/1000us waveform, MELF (DO-213AB) Repetition rate (duty cycle): 0.01%.
  • Fast response time: typically less than 1.0ps from 0V to VBR.
  • For devices with VBR≥10V, ID are typically less than 1.0uA.
  • High temperature soldering guaranteed 250°C/10 seconds a.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TGL416.8-TAITRON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TGL41-7.5C
Manufacturer TAITRON
File Size 239.00 KB
Description 400W Surface Mount Transient Voltage Suppressor
Datasheet download datasheet TGL41-7.5C Datasheet

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Other Datasheets by TAITRON

Part Number Description
TGL41-7.5 400W Surface Mount Transient Voltage Suppressor
TGL41-7.5A 400W Surface Mount Transient Voltage Suppressor
TGL41-75 400W Surface Mount Transient Voltage Suppressor
TGL41-75A 400W Surface Mount Transient Voltage Suppressor
TGL41-75C 400W Surface Mount Transient Voltage Suppressor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
400W Surface Mount Transient Voltage Suppressor TGL41-6.8 - TGL41-170CA 400W Surface Mount Transient Voltage Suppressor Features • Breakdown voltage from 6.8 to 170 volts • Glass passivated junction • Excellent clamping capability • Low incremental surge resistance • 400W peak pulse capability with a 10/1000us waveform, MELF (DO-213AB) Repetition rate (duty cycle): 0.01% • Fast response time: typically less than 1.0ps from 0V to VBR • For devices with VBR≥10V, ID are typically less than 1.
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