* Super high dense cell trench design for low RDS(on).
* Rugged and reliable.
* Surface Mount package. So-8 D1 D1 D2 D2 876 5 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ T
TM4953S
TECH MOS
141.60 KB
Dual p-channel high density trench mosfet.
TECH MOS Technology. Dual P-Channel High Density Trench MOSFET TM4953S TM4953FS(Pb-free) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max - 30V - 4.9.
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