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BUF646 - Silicon NPN Transistor

Key Features

  • D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 95 9630.

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Other Datasheets by TEMIC Semiconductors (now Microchip)

Part Number Description
BUF646A Silicon NPN Transistor
BUF672 Silicon NPN High Voltage Switching Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TELEFUNKEN Semiconductors BUF646 • BUF646A Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 95 9630 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage Test Conditions Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range xTcase 25°C Type BUF646 BUF646A BUF646 BUF646A Symbol VCEO VCEO VCES VCES VEBO IC ICM I