* D D D D D High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching Applications D D
ND2012L
TEMIC
76.97 KB
N-channel depletion-mode mosfet transistors.
ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2012L ND2020L V(BR)DSV Min (V) 200 rDS(on) Max (W) 12 20 VG.
📁 Related Datasheet
ND2012E N-Channel Depletion-Mode MOS Transistors (Siliconix)
ND2012L N-Channel Depletion-Mode MOS Transistors (Siliconix)
ND2020E N-Channel Depletion-Mode MOS Transistors (Siliconix)
ND2020L N-Channel Depletion-Mode MOS Transistors (Siliconix)
ND2020L N-Channel Depletion-Mode MOSFET Transistors (TEMIC)
ND2406B N-Channel Depletion-Mode MOS Transistors (Siliconix)
ND2406L N-Channel Depletion-Mode MOS Transistors (Siliconix)
ND2406L (ND2406L / ND2410L) N-Channel Depletion-Mode MOSFET Transistors (ETC)
ND2410B N-Channel Depletion-Mode MOS Transistors (Siliconix)
ND2410L N-Channel Depletion-Mode MOS Transistors (Siliconix)
