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TEMIC
Siliconix
N-Channel Enhancement-Mode TI:ansistor
SMW60NIO
Product Summary
V(BR)DSS (V) 100
rDS(ou) (Q) 0.025
ID (A) 60
D
TO·247AD
)0 I
lI
G DS Top View
S N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy"
Power Dissipallon
Operating Junction and Storage Thmperature Range Lead Thmperature (1116" from case for 10 sec.)
Tc = 25·C Tc = lOO·C
L=0.3mH L= 0.02mH Tc=25·C Tc = 100·C
Symbol
Vos
ID
IDM IAR EA EAR
PD
TJ,T"g TL
Umlt
±20 60 37 240 60 540 36 180 70 -55 to 150 300
Unit
V A
mJ W ·C
Thermal Resistance Ratings
Parameter
Junction-to-Ambient Junction-to-Case Case-to-Sink Notes:
a.