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TEMIC
Siliconix
SMW70N06·14
N-Channel Enhancement-Mode lransistor
Product Summary
V(BR)DSS (V) 60
rnS(on) (Q) 0.014
TO-247AD
)0 I
In (A) 70
l
DRAIN connected to TAB
n
Go-J
GDS ThpView
S N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current Avalanche Current3 Repetitive Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
Lead 'Thmperature (1116" from case for 10 sec.)
Tc-2S·C Tc = 100·C
L=O.lmH Tc=25·C Tc = 100·C
Symbol
VGS
ID
IDM IAR EAR
PD
TJ. Tstg TL
limit
±20 70 48 280 70 245 150 60 -55 to 150 300
Unit
V
A
mJ W ·C
Thermal Resistance Ratings
Parameter
Junction-ta-Ambient Junction-to-Case Case-to-Sink Notes: a.
SMW70N06-14 Datasheet
