VN2010L - N-Channel Enhancement-Mode MOS Transistors

TEMIC

Key Features

Benefits D Low OnĆResistance: 6 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability D Low Offset Voltage D FullĆVoltage Operation D Easily Driven Without Buffer D Low Error Voltage D No HighĆTemperature RunĆAway".

VN2010L n-channel enhancement-mode mos transistors by TEMIC - Datasheet Preview

Datasheet Details

Part number	VN2010L
Manufacturer	TEMIC
File Size	105.60 KB
Description	N-Channel Enhancement-Mode MOS Transistors
Datasheet	VN2010L Datasheet

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Siliconix VN2010L/BS107 NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR)DSS Min (V) 200 rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.8 0.8 to 3 ID (A) 0.19 0.12 Features Benefits D Low OnĆResistance: 6 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability D Low Offset Voltage D FullĆVoltage Operation D Easily Driven Without Buffer D Low Error Voltage D No HighĆTemperature RunĆAway" Applications D HighĆVoltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.