VN2010L transistors equivalent, n-channel enhancement-mode mos transistors.
Benefits
D Low OnĆResistance: 6 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability
D Low Offse.
D HighĆVoltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer.
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