VP2410L Datasheet | TEMIC Semiconductors

P-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) rDS(on) Max (W) - 240 10 @ VGS = - 4.5 V VGS(th) (V) - 0.8 to - 2.5 ID (A) - 0.18 Features D High-Side Switching D Secondary Breakdown Free: - 255 V D Low On-Resistance: 8 W D Low-Power/Voltage Driven D Excellent Thermal Stability Benefits D Ease in Driving Switches D Full-Voltage Operation D Low Offset Voltage D Easily Driven Without Buffer D No High-Temperature “Run-Away” Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Power Supply, Converters D Motor Control D Switches TO-226AA (TO-92) S1 G2 D3 Top...